HEMT
Los HEMT, acrónimo del inglés High electron mobility transistor (Transistor de alta movilidad de electrones), también conocidos como HFET, acrónimo de Heterostructure FET (FET de Heteroestructura, que a su vez es el acrónimo de Field Effect Trasistor, transistor de efecto de campo) o también MODFET, Modulation-doped FET (Transistor FET de dopado modulado) son un tipo de transistor de efecto de campo que incorporan una unión entre dos materiales con diferentes bandas prohibidas, una heterounión, como canal de conducción en vez de una región dopada como es generalmente el caso de los MOSFET.
La composición más habitual de estos transistores es una combinación de Arseniuro de galio, GaAs, con Arseniuro de galio-aluminio, AlGaAs; aunque existe una gran variabilidad en función de la aplicación a la que se destine. Existen transistores que contienen Indio, que generalmente presentan mejores rendimientos a altas frecuencias, mientras que recientemente se han introducido transistores con Nitrito de Galio, GaN, que presentan mejor rendimiento en alta potencia.
Las aplicaciones de estos transistores son similares a los transistores MESFET, telecomunicación en las bandas de microondas y de onda milimétrica, radar, radioastronomía y en general en cualquier aplicación que requiera de alta ganancia y bajo ruido a altas frecuencias

Esto es un extracto del artículo HEMT de la enciclopedia libre Wikipedia. En Wikipedia hay disponible una lista de los autores.
En los últimos 30 días se ha accedido 39 veces al artículo HEMT en es.wikipedia.org. (Versión: 17.07.2013)
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Transistores HEMT - Wikipedia, la enciclopedia libre
Los HEMT, acrónimo del inglés High electron mobility transistor (Transistor de alta movilidad de electrones), también conocidos como HFET, acrónimo de ...
es.wikipedia.org/wiki/Transistores_HEMT
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High-electron-mobility transistor - Wikipedia, the free encyclopedia
High-electron-mobility transistor (HEMT), also known as heterostructure FET ( HFET) or modulation-doped FET (MODFET), is a field-effect transistor ...
en.wikipedia.org/wiki/High-electron-mobility_transistor
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High Electron Mobility Transistors (HEMT) - Millimeter-Wave ...
The High Electron Mobility Transistor (HEMT) is a heterostructure field-effect transistor (FET). Its principle is based on a heterojunction which consists of at least ...
www.mwe.ee.ethz.ch/en/about-mwe-group/research/vision-and-aim/high-electron-mobility-transistors-hemt.html
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HEMT, High Electron Mobility Transistor :: Radio-Electronics.Com
A summary or tutorial of the basics of the High Electron Mobility Transistor, HEMT , used in many RF design applications and RF circuits.
www.radio-electronics.com/info/data/semicond/fet-field-effect-transistor/hemt-phemt-transistor.php
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High Electron Mobility Transistors (HEMTs)
Imax (A/mm). 100 (over 200 reported for small Lgd). 20. Vbreakdown (V). 5 (~ Vpinchoff). 1. Vknee (V). AlGaN/GaN HEMT. GaAs pHEMT. V breakdown. I max.
www.ee.sc.edu/personal/faculty/simin/ELCT871/18%20AlGAN-GaN%20HEMTs.pdf
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1 AlGaN/GaN HEMTs: An overview of device operation and ...
AlGaN/GaN HEMT seems the most promising. This paper attempts to ... GaN HEMTs for commercial and DoD applications, sooner rather than later. GaN HEMTs ...
my.ece.ucsb.edu/Mishra/classfiles/overview.pdf
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Cree News: Cree Ships Over Two Million GaN HEMT Devices for ...
3 Jun 2013 ... Cree Ships Over Two Million GaN HEMT Devices for Telecom Infrastructure.
www.cree.com/news-and-events/cree-news/press-releases/2013/june/gan-hemt-2-million
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2 The principles of a HEMT
HEMTs are field effect transistors where the current flow between two ohmic ... A schematic cross section of a HEMT with a Tshaped gate is shown in Figure 2.1.
www.iue.tuwien.ac.at/phd/brech/ch_2.htm
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Transistores HEMT | Comprar Transistores HEMT | RS
Encuentre Transistores HEMT en rs-online.com, así como Semiconductores Discretos. El distribuidor líder de Componentes Electrónicos, Fuentes de ...
es.rs-online.com/web/c/semiconductores/semiconductores-discretos/transistores-hemt/
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Diapositiva 1
TRANSISTORES Autor(as) Historia Concepto Modos de Trabajo Tipos Funcionamiento Tipos de Conexión Glosario Índice Referencias Galería Para volver a la diapositiva ...
sistemaselectronicafisica.bligoo.es/media/users/8/419576/files/31957/Transistores.ppt
Resultados de la búsqueda para "HEMT"
Google: aprox. 882.000
HEMT en el ámbito científico
Improved GaN-based HEMT performance by nanocrystalline ...
23 Jun 2013 ... Universidad Politecnica de Madrid. Inicio · E- ... Improved GaN-based HEMT performance by nanocrystalline diamond capping. Anderson ...
[PDF]Equivalent Circuit MESFET/HEMT Modelling Approaches
(Electronic) degree with honours in 1983, both from the University of Cantabria, Santander ... He is currently working in the area of nonlinear MESFET/HEMT and.
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GaN group. Hokkaido University. 3. Mesa-gate AlGaN/GaN HEMT with a single channel. GaN. AlGaN mesa-gate. 2DEG normal field lateral field lateral field.
Crecimiento y fabricación de transistores HEMT - Scribd
UNIVERSIDAD POLITÉCNICA DE MADRID. ESCUELA TÉCNICA .... Transistores de heterounión de alta movilidad de electrones (HEMT) de AlGaN/ GaN.
[PDF]Diseño de Rectificadores Síncronos Clase E en Tecnología GaN ...
UNIVERSIDAD DE CANTABRIA. Proyecto Fin de Carrera. Diseño de Rectificadores Síncronos Clase. E en Tecnología GaN HEMT. (Design of Class E ...
[PDF]Diseño de Osciladores Clase E en Tecnología GaN HEMT
27 Mar 2013 ... UNIVERSIDAD DE CANTABRIA. Proyecto Fin de Carrera. Diseño de Osciladores Clase E en. Tecnología GaN HEMT. Design of Class E ...
Getting to grips with GaN HEMT degradation
Researchers from imec, the University of Padova and the University of Modena and Reggio Emilia, have propsed a model for explaining HEMT degradation of ...
AlGaN/GaN High Electron Mobility Transistors(HEMTs) Based Sensors
University of Florida :: Department Of Chemical Engineering :: Faculty :: Fan Ren ... The HEMT pH sensors show stable operation with a resolution of < 0.1 pH ...
[PDF]1 AlGaN/GaN HEMTs: An overview of device operation and ...
AlGaN/GaN HEMTs: An overview of device operation and applications. U.K. Mishra. Electrical & Computer Engineering Department, Engineering I, University of ...
[PDF]V - TDX
Transistores MESFET y HEMT de Microondas. Tesis doctoral presentada por Mohamed Chaibi para optar al título de Doctor por la Universidad de Cantabria, ...
Libros sobre el término HEMT
Gallium Nitride-based HEMT Devices Modeling and Performance ...
Gallium Nitride-based HEMT Devices Modeling and Performance ...
Guang Chen, 2008
In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented.
Pseudomorphic HEMT Technology and Applications
Pseudomorphic HEMT Technology and Applications
R.L. Ross, Stefan P. Svensson, Paolo Lugli, 1996
This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications.
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Entradas de blog sobre el término
HEMT
Cree licenses nitride materials, HEMT and Schottky diode patents to power conversion device maker Transphorm
www.semiconductor-today.com/news_items/2013/AUG/CREE_050813.html
Watch "GaN HEMT-based RF Power Transistors for L-Band RADAR Applications from Cree - IMS 2013" Video at Engineering TV
At IMS 2013, Cree demonstrates a 500W GaN HEMT for L-Band RADAR applications, operating from 900MHz to 1.5GHz.Hosted by: Nancy Friedrich Videography by: Curtis Ellzey Edited by: Curtis Ellzey
www.engineeringtv.com/video/GaN-HEMT-based-RF-Power-Transis
NPT21500 90W GaN RF HEMT, 2.1-2.7 GHz from Nitronix | K-Tech Sales
ktechsales.com/?p=1874
Rensselaer Polytechnic Institute successfully integrated HEMT and LED on the same GaN | LED news, LED knowledge, technologies, events
Professor Chow and research teams created the independent components what they call the first integrated HEMT and LED on the same GaN chip.
www.lednews.org/integrated-hemt-led-same-gan-ganled/
"Analytical Modeling and Simulation of SiGe MOS Gate HEMT." by Mohmmad Tanvir Alam
This thesis presents work on analytical modeling and simulation of SiGe MOS gate HEMT. A modified model for the threshold voltage of the MOS-gate HEMT is presented. An expression to calculate accurately minimum gate voltage VGmin of p-channel MOS-gate HEMT is derived. Using the modified expressions, VTHp and VGmin are calculated. Current-voltage characteristics, transconductance and cutoff frequency are calculated and plotted using the modified model and the results are compared with the results obtained from an existing model. The effects of different device and material parameter variation on VTHp and VGmin are also investigated.An analytical temperature model for the MOS-gate HEMT is proposed. The temperature variation of threshold voltage, current-voltage characteristics and transconductance are simulated using the analytical model.A model for a delta-doped MOS-gate HEMT is proposed which is valid for any width of the delta-doped layer. Effects of different device parameters on VTHp and Vtl have been investigated using this model.In addition, device simulator MediciTM has been used to simulate the delta-doped and regular-doped MOS-gate HEMTs. The results obtained from the MediciTM simulations are compared to some of the results obtained from the analytical model.
trace.tennessee.edu/utk_gradthes/1575/
Hemt Lang te dessine n fycase po rayban | syblyviasypfju
Publicado el 8 agosto, 2013 por zxas3800.
blog.uaa.edu.py/zxas3800/2013/08/08/hemt-lang-te-dessine-n-fycase-po-rayban/
Sumitomo Electric Announces Ku-Band GaN HEMT for SATCOM Tokyo Stock Exchange:5802
SAN JOSE, Calif., June 4, 2013 (GLOBE NEWSWIRE) -- Sumitomo Electric Device Innovations USA, Inc. (SEDU), a leading provider of advanced RF, wireless and optical communications solutions, has introduced its first Ku-Band GaN HEMT power amplifier (PA) for SATCOM applications. GaN technology allows significantly higher output powers—50W for GaN versus 30W for GaAs. Tuned for operation from 13.75 to 14.5 GHz, the new SGK1314-50A PA is internally matched for extended Ku SATCOM band to provide optimum power and gain in a 50-ohm system.
globenewswire.com/news-release/2013/06/04/551877/10035061/en/Sumitomo-Electric-Announces-Ku-Band-GaN-HEMT-for-SATCOM.html
Plasma diagnostics and devices properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced Chemicals vapour deposition | Group of Electronic Engineering applied to Intelligent Spaces and Transport Systems
www.geintra-uah.org/biblio/plasma-diagnostics-and-devices-properties-algangan-hemt-passivated-sin-deposited-by-plasma--0
GaN HEMTs Fortify S-Band Radar Systems | Semiconductors content from Defense Electronics Magazine
This collection of packaged discrete transistors and an integrated circuit build upon GaN semiconductor materials to provide high output-power densities at S-band frequencies.
defenseelectronicsmag.com/semiconductors/gan-hemts-fortify-s-band-radar-systems
IQE has developed GaN HEMT epitaxial wafers on 150mm diameter semi-insulating SiC substrates. | Silicon South West
IQE has developed GaN HEMT epitaxial wafers on 150mm diameter semi-insulating SiC substrates.
siliconsouthwest.co.uk/index.php/2013/05/iqe-develops-gan-hemt-on-sic-substrates/
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